GaN Power Device Market Analysis By Geography, Competitors, Trends and Demands To 2026
Gallium nitride
(GaN) compound is a hard semiconductor material featuring a wide band gap
(energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal
conductivity. GaN finds significant applications in power devices used in
electrical energy control systems and conversions including telecommunication,
industrial, automotive, and high RF antennas and radar in aerospace and defense
technologies are expected to provide opportunities for growth of the GaN market
over the forecast period.
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High energy
efficiency loss in power devices is primarily attributed to conduction losses
due to high device resistance and switching transitions. GaN materials prevent
such energy loss, as they are featured with high breakdown voltage and low
conduction resistance, in turn enabling high-speed switching operations. GaN
thus is used to ensure high efficiency of operations in electrical systems.
Moreover, low conduction resistance of GaN, allows the material compound to
sustain high energy application in compact sizes, enabling higher
miniaturization of the circuits. These significant benefits of GaN over other
alternatives such as silicon transistors that feature relatively larger chip
area to enhance their conductivity, are expected to fuel the overall GaN power
device market.
Substantial
growth of end-use verticals is expected to boost market growth
Advancements in
technology related to GaN power devices are enhancing the computational power
of all systems, in turn boosting market growth. For instance, in December 2017,
Yuji Zhao, an electrical and computer expert from Arizona State University
received a three year grant of US$ 750,000 from National Aeronautics and Space
Administration’s (NASA) Hot Operating Temperature Technology (HOTTech) program
for the gallium nitride processor for applications in space. In January 2018,
Corsair introduced Corsair AX1600i featuring off-the shelf efficiency, ripple
suppression, noise levels, voltage regulation, and highly compact power supply
unit. These two instances of technological developments are primarily based on
the utilization of Gallium Nitride based materials. replacing Silicon
transistors as prominently used material in the switching devices.
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The recent past
has witness high proliferation of electric vehicles and increasing adoption of
electrical and electronic components in internal combustion engines for
enhanced and convenient control among users. According to Coherent Market
Insights, vehicle electrification technologies are expected to witness a CAGR
of over 8.8% over the forecast period and be valued at over US$ 120 billion by
2025. Increasing adoption of autonomous vehicles is expected to increase the
demand for efficient communication systems featuring high frequency bandwidth
and robust operations. This in turn, is expected to fuel growth of the market
for GaN power devices in the near future.
High cost of
systems featuring integration of gallium nitride components due to capital
intensive nature of materials and manufacturing procedures is expected to
hamper growth of the market. Moreover, GaAs components are widely used in small
signal Monolithic Microwave Integrated Circuit (MMIC) and low noise amplifier
(LNA). Application of gallium nitride semiconductor is projected to become
mainstream component, though it will require considerable time owing to the
cost factor and thus, is among the prominent growth challenges.
Asia Pacific
accounts for the largest population base and is also the largest market for key
end-use industries, in turn, contributing to the largest consumer base of GaN
power devices. According to Coherent Market Insights’ analysis, China and India
contribute to around 35% of the global population base. Moreover, largest
consumer base for automotive, consumer electronics, communication, and
industrial manufacturing will provide the strongest growth prospects over the
forecast period.
Competitive Background
Some of the key
players in the GaN power devices market are Cree Inc., Efficient Power
Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom,
Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor,
Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.
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